N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

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Publié par

profil-zyan-2012

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Niveau: Secondaire, Lycée, Terminale
BUZ11 BUZ11FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS n TYPICAL RDS(on) = 0.03 ? n AVALANCHE RUGGED TECHNOLOGY n 100% AVALANCHE TESTED n REPETITIVE AVALANCHE DATA AT 100oC n LOW GATE CHARGE n HIGH CURRENT CAPABILITY n 175oC OPERATING TEMPERATURE APPLICATIONS n HIGH CURRENT, HIGH SPEED SWITCHING n SOLENOID AND RELAY DRIVERS n REGULATORS n DC-DC & DC-AC CONVERTERS n MOTOR CONTROL, AUDIO AMPLIFIERS n AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) INTERNAL SCHEMATIC DIAGRAM TYPE VDSS RDS(on) ID BUZ11 BUZ11FI 50 V 50 V < 0.04 ? < 0.04 ? 36 A 21 A 1 2 3 TO-220 ISOWATT220 May 1993 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BUZ11 BUZ11FI VDS Drain-source Voltage (VGS = 0) 50 V VDG R Drain- gate Voltage (RGS = 20 k?) 50 V VGS Gate-source Voltage ± 20 V ID Drain Current (cont inuous) at Tc = 25 oC 36 21 A IDM Drain Current (pulsed) 144 144 A Ptot Total Dissipation at Tc = 25 oC 120 40 W VISO Insulat ion Withstand Voltage (DC) ? 2000 V Tstg Storage Temperature -65 to 175 oC Tj Max. Operat ing Junction Temperature 175 oC DIN Humidity Category (DIN 40040) E IEC Climatic Category (DIN IEC 68-1) 55/150/56 1 2 3 1/8

µa µa

static drain-source

gate voltage

ns ns

symbol parameter

current

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Publié par

profil-zyan-2012

Nombre de lectures

TYPE BUZ11 BUZ11F I

n n n n n n n

VDSS 50 V 50 V

BUZ11 BUZ11FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

RDS ( on) < 0. 04W < 0. 04W

ID 36 A 21 A

TYPICAL RDS(on)= 0.03W AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED o REPETITIVE AVALANCHE DATA AT 100 C LOW GATE CHARGE HIGH CURRENT CAPABILITY o 175 C OPERATING TEMPERATURE

APPLICATIONS nHIGH CURRENT, HIGH SPEED SWITCHING nSOLENOID AND RELAY DRIVERS nREGULATORS nDC-DC & DC-AC CONVERTERS nMOTOR CONTROL, AUDIO AMPLIFIERS nAUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)

ABSOLUTE MAXIMUM RATINGS

Symb ol

VD S VDG R VG S ID IDM Ptot VISO Tstg Tj

May 1993

Parameter

Drain-sour ce Voltage (VG S= 0) Drain- gate Voltage (RGS= 20 kW) Gate-source Voltage o Drain Current (cont inuous) at Tc= 25 C Drain Current (pulsed) o T otal Dissipation at TcC= 25 I nsulat ion Withstand Voltage (DC) St orage Temperat ure Max. Operat ing Junction Temperatur e DIN Humidit y Category (DI N 40040) I EC Climatic Category (DIN I EC 68-1)

TO-220

3 2 1

ISOWATT220

3 2 1

INTERNAL SCHEMATIC DIAGRAM

BUZ11

36 144 120 '

Val ue

50 50 #20

-65 to 175 175 E 55/ 150/56

BUZ11FI

21 144 40 2000

Unit

V V V A A W V o C o C

1/8

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