Study of the deep levels induced by the high energy proton and neutron irradiation in the structures of high resistivity Si, SiC and GaN ; Didelės energijos protonais ir neutronais sukurtų giliųjų centrų tyrimas didžiavaržio Si, SiC ir GaN dariniuose
27
pages
English
Documents
2009
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27
pages
English
Documents
2009
Obtenez un accès à la bibliothèque pour le consulter en ligne En savoir plus
VILNIUS UNIVERSITY SEMICONDUCTOR PHYSICS INSTITUTE Vidmantas Kalendra STUDY OF THE DEEP LEVELS INDUCED BY THE HIGH ENERGY PROTON AND NEUTRON IRRADIATION IN THE STRUCTURES OF HIGH RESISTIVITY Si, SiC AND GaN Summary of doctoral thesis Physical science, Physics (02P), Semiconductor Physics (P 265) Vilnius, 2009 The thesis has been prepared in the period from 2005 to 2009 at the Semiconductor Department and Institute of Applied Research, Vilnius University Scientific Supervisor: Prof. Habil. Dr. Vaidotas Kažukauskas (Vilnius University, Physical Sciences, Physics – P02, Semiconductor physics – P265) Consultant: Prof., corresponding member of the Lithuanian Academy of Sciences Juozas Vidmantis Vaitkus (Vilnius University, Physical Sciences, Physics – P02, Semiconductor physics – P265) The thesis will be defended at the Council of Physical Science: Chairman Prof. Habil. Dr. Gintautas Tamulaitis (Vilnius University, Physical Sciences, Physics – 02, Semiconductor physics – P265) Members: Dr. Karolis Kazlauskas (Vilnius University, Physical Sciences, Physics – 02, Semiconductor physics – P265) Prof. Habil. Dr. Eugenijus Šatkovskis (Vilnius Gediminas Technical University, Physical Sciences, Physics – 02, Semiconductor physics – P265) Prof. Habil. Dr. Rimantas Vaišnoras (Vilnius Pedagogical University, Physical Sciences, Physics – 02, Condensed matter – P260) Doc. Dr.
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VILNIUS UNIVERSITY SEMICONDUCTOR PHYSICS INSTITUTE Vidmantas Kalendra STUDY OF THE DEEP LEVELS INDUCED BY THE HIGH ENERGY PROTON AND NEUTRON IRRADIATION IN THE STRUCTURES OF HIGH RESISTIVITY Si, SiC AND GaN Summary of doctoral thesis Physical science, Physics (02P), Semiconductor Physics (P 265)
Vilnius, 2009
The thesis has been prepared in the period from 2005 to 2009 at the Semiconductor Department and Institute of Applied Research, Vilnius University Scientific Supervisor: Prof. Habil. Dr. Vaidotas Kaukauskas (Vilnius University, Physical Sciences, Physics P02, Semiconductor physics P265) Consultant: Prof., corresponding member of the Lithuanian Academy of Sciences Juozas Vidmantis Vaitkus (Vilnius University, Physical Sciences, Physics P02, Semiconductor physics P265) The thesis will be defended at the Council of Physical Science: Chairman Prof. Habil. Dr. Gintautas Tamulaitis (Vilnius University, Physical Sciences, Physics 02, Semiconductor physics P265) Members: Dr. Karolis Kazlauskas (Vilnius University, Physical Sciences, Physics 02, Semiconductor physics P265) Prof. Habil. Dr. Eugenijus atkovskis (Vilnius Gediminas Technical University, Physical Sciences, Physics 02, Semiconductor physics P265) Prof. Habil. Dr. Rimantas Vainoras (Vilnius Pedagogical University, Physical Sciences, Physics 02, Condensed matter P260) Doc. Dr. Bonifacas Vengalis (Semiconductor Physics Institute, Physical Sciences, Physics 02, Semiconductor physics P265) Opponents: Prof. Habil. Dr. Edmundas Kuoktis (Vilnius University, Physical Sciences, Physics 02, Semiconductor physics P265) Prof. Habil. Dr. Sigitas Tamulevičius (Kaunas University of Technology, Physical Sciences, Physics 02, Condensed matter P260) The defence of the thesis will take place at the public meeting of the Council of Physical Science at 3 p.m. on December 4, 2009 at the Faculty of Physics of Vilnius University, room 212. Adress: Saulėtekio av. 9/3, LT-10222, Vilnius, Lithuania. Summary of the thesis has been send out on November , 2009. The thesis is available at the libraries of Vilnius University and Semiconductor Physics Institute.
