Niveau: Secondaire, Lycée, Terminale
STP20N06 STP20N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR n TYPICAL RDS(on) = 0.06 ? n AVALANCHE RUGGED TECHNOLOGY n 100% AVALANCHE TESTED n REPETITIVE AVALANCHE DATA AT 100oC n LOW GATE CHARGE n HIGH CURRENT CAPABILITY n 175oC OPERATING TEMPERATURE n APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS n HIGH CURRENT, HIGH SPEED SWITCHING n SOLENOID AND RELAY DRIVERS n REGULATORS n DC-DC & DC-AC CONVERTERS n MOTOR CONTROL, AUDIO AMPLIFIERS n AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) INTERNAL SCHEMATIC DIAGRAM TYPE VDSS RDS(on) ID STP20N06 STP20N06FI 60 V 60 V < 0.085 ? < 0.085 ? 20 A 13 A 1 2 3 TO-220 ISOWATT220 December 1996 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP20N06 STP20N06FI VDS Drain-source Voltage (VGS = 0) 60 V VDG R Drain- gate Voltage (RGS = 20 k?) 60 V VGS Gate-source Voltage ± 20 V ID Drain Current (cont inuous) at Tc = 25 oC 20 13 A ID Drain Current (cont inuous) at Tc = 100 oC 14 9 A IDM(•) Drain Current (pulsed) 80 80 A Ptot Total Dissipation at Tc = 25 oC 80 35 W Derating Factor 0.53 0.23 W/oC VISO Insulat ion Withstand Voltage (DC) ? 2000 V Tstg Storage Temperature -65 to 175 oC Tj Max.
- avalanche characteristics
- drain current
- gate-drain charge
- gate voltage
- pf
- µa