IRLR U120N HEXFET® Power MOSFET

lllllSurface Mount (IRLR120N)
Straight Lead (IRLU120N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°CContinuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°CContinuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
QV
P
D
@T
C
= 25°CPower Dissipation
Linear Derating Factor
V
GS
Gate-to-Source Voltage
E
AS
Single Pulse Avalanche Energy
RV
I
AR
Avalanche Current
QV
E
AR
Repetitive Avalanche Energy
QV
dv/dtPeak Diode Recovery dv/dt
S
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R
q
JC
Junction-to-Case
R
q
JA
Junction-to-Ambient (PCB mount) **
R
q
JA
Junction-to-Ambient
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G

PD - 91541B
IRLR/U120N
HEXFET
®
Power MOSFET
DV
DSS
= 100V
R
DS(on)
= 0.185
W
S
I
D
= 10A

T OD--2P5A2KAA T OI--P2A51KAA

.xaM010.75384 0±. 3126
580.68.40.5-55 to + 175
300 (1.6mm from case )

Typ.Max.
3.1
05110

stinUAWC°/WVJmAJm/VsnC°

tinUsW/C°1

5/11/98

IRLR/U120N

VTElectrical Characteristics @ T
J
= 25°C (unless otherwise specified)
ParameterMin.Typ.Max.Units

Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage100V
GS
V = 0V, I
D
= 250µA
D
V
(BR)DSS
/
D
T
J
Breakdown Voltage Temp. Coefficient0.12V/°CReference to 25°C, I
D
= 1mA
0.185
GS
V = 10V, I
D
= 6.0A
T
R
DS(on)
Static Drain-to-Source On-Resistance0.225W
GS
V = 5.0V, I
D
= 6.0A
T
0.265
GS
V = 4.0V, I
D
= 5.0A
T
V
GS(th)
Gate Threshold Voltage1.02.0V
D
V
S
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance3.1S
DS
V = 25V, I
D
= 6.0A
V
25V
DS
= 100V, V
GS
= 0V
I
DSS
Drain-to-Source Leakage Current250µA
DS
V = 80V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage100V
GS
= 16V
I
GSS
Gate-to-Source Reverse Leakage-100nA
GS
V = -16V
Q
g
Total Gate Charge20
D
I= 6.0A
Q
gs
Gate-to-Source Charge4.6nC
DS
V = 80V
Q
gd
Gate-to-Drain ("Miller") Charge10
GS
V = 5.0V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time4.0
DD
V = 50V
t
r
Rise Time35nsI
D
= 6.0A
t
d(off)
Turn-Off Delay Time23
G
R= 11
W∃
V
GS
= 5.0V
t
f
Fall Time22
D
R= 8.2
W∃
See Fig. 10
TV
Between lead,
D
L
D
Internal Drain Inductance 4.5 nH6mm (0.25in.)
from package
G
L
S
Internal Source Inductance 7.5and center of die contact
U
S
C
iss
Input Capacitance440
GS
V = 0V
C
oss
Output Capacitance97pF
DS
V = 25V
C
rss
Reverse Transfer Capacitance50 = 1.0MHz, See Fig.
V
5
Source-Drain Ratings and Characteristics
ParameterMin.Typ.Max.Units

Conditions
I
S
Continuous Source Current10MOSFET symbol
D
(Body Diode)Ashowing the
I
SM
Pulsed Source Currentintegral reverse
G
(Body Diode)
QV
35p-n junction diode.
S
V
SD
Diode Forward Voltage1.3V
J
T= 25°C, I
S
= 6.0A, V
GS
= 0V
T
t
rr
Reverse Recovery Time110160ns
J
T = 25°C, I
F
=6.0A
Q
rr
Reverse RecoveryCharge410620nCdi/dt = 100A/µ

s
TV
t
on
Forward Turn-On TimeIntrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Q
Repetitive rating; pulse width limited by
T
Pulse width
£
300µs; duty cycle
£
2%.
max. junction temperature. ( See fig. 11 )
R
V
DD
= 25V, starting T
J
= 25°C, L = 4.7mH
U
This is applied for I-PAK, L
S
of D-PAK is measured between lead and
R
G
= 25
W
, I
AS
= 6.0A. (See Figure 12) center of die contact
S
I
SD
£
6.0A, di/dt
£
340A/µs, V
DD
£
V
(BR)DSS
,
V
Uses IRL520N data and test conditions.
T
J
£
175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
2www.irf.com

nad001 VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
01

1

V5.2

T2
J
0 µ=s 2P5U°CLSE WIDTH
0.10.1110100
A
V
D

S
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics

001T
J
= 25°C
10
T
J
= 175°C

1 V
D

S
= 50V
0.1
20µs PULSE WIDTH
A
246810
V
G

S
, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
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001 VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
01

1

IRLR/U120N

V5.2

T2 0 µ=s 1P7U5°LCSE WIDTH
J0.10.1110100
A
V
D

S
, Drain-to-Source Voltage (V)
Fig 2.
Typical Output Characteristics

3.0
I
D
= 10A
5.20.25.10.15.00.0
V
G

S
= 10V
-60-40-20020406080100120140160180
A
T
J
, Junction Temperature (°C)
Fig 4.
Normalized On-Resistance
Vs. Temperature
3

IRLR/U120N

4

008V = 0V, f = 1MHz
SGC =C +C ,C SHORTED
iss




gs




gd





ds
C =C
rss




gd
C =C + C
oss



ds


gd
006 Cssi004 Csso002 Cssr0A110100
V , Drain-to-Source Voltage (V)
SDFig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage

001

T
J
= 175°C
01T
J
= 25°C
1

V
G

S
= 0V
0.10.40.60.81.01.21.4
A
V
S

D
, Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage

V = 80V
SD V = 50V
SD V = 20V
SD

15
I
D
= 6.0A
21963 FOR TEST CIRCUIT
0
SEE FIGURE 13
A
0510152025
Q
G
, Total Gate Charge (nC)
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage

001

011

OPERATION IN THIS AREA LIMITED
BY R
DS(on)
sµ01sµ001sm1sm01 TT
C
== 2157°5C°C
J0.1
Single Pulse
A
1101001000
V
D

S
, Drain-to-Source Voltage (V)
Fig 8.
Maximum Safe Operating Area
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018642A0255075100125150175
T
C
, Case Temperature (°C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature

01

D = 0.50
10.20
01.050.020.00.10.01

(THSEIRNMGALLE RPEUSLPSOENSE)

IRLR/U120N

RDVSDV
GS
D.U.T.
RG+V-DDV0.5PDuultsye FWacitdotrh
££ 01& 1
µ
%
s
Fig 10a.
Switching Time Test Circuit
VSD%09%01VSGt
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms

PMDt1t2Notes:
21.. PDeutayk fTa
J
ct=orP D
D

M
=xt
1
Z/
t
t<