IRL3103D1 PD 1608C
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Niveau: Secondaire, Lycée, Terminale
IRL3103D1 PD 9.1608C 12/16/97 Description The FETKY family of copackaged HEXFET power MOSFETs and Schottky Diodes offer the designer an innovative board space saving solution for switching regulator applications. A low on resistance Gen 5 MOSFET with a low forward voltage drop Schottky diode and minimized component interconnect inductance and resistance result in maximized converter efficiencies. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. l Copackaged HEXFET® Power MOSFET and Schottky Diode l Generation 5 Technology l Logic Level Gate Drive l Minimize Circuit Inductance l Ideal For Synchronous Regulator Application Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V? 64 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V? 45 A IDM Pulsed Drain Current ?? 220 PD @TA = 25°C Power Dissipation 2.0 W PD @TC = 25°C Power Dissipation 89 W Linear Derating Factor 0.56 W/°C VGS Gate-to-Source Voltage ± 16 V TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) °C Absolute Maximum Ratings VDSS = 30V RDS(on) = 0.014? ID = 64A FETKYTM MOSFET & SCHOTTKY RECTIFIER Parameter Typ.
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IRL3103D1 PD 9.1608C 12/16/97 Description The FETKY family of copackaged HEXFET power MOSFETs and Schottky Diodes offer the designer an innovative board space saving solution for switching regulator applications. A low on resistance Gen 5 MOSFET with a low forward voltage drop Schottky diode and minimized component interconnect inductance and resistance result in maximized converter efficiencies. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. l Copackaged HEXFET® Power MOSFET and Schottky Diode l Generation 5 Technology l Logic Level Gate Drive l Minimize Circuit Inductance l Ideal For Synchronous Regulator Application Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V? 64 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V? 45 A IDM Pulsed Drain Current ?? 220 PD @TA = 25°C Power Dissipation 2.0 W PD @TC = 25°C Power Dissipation 89 W Linear Derating Factor 0.56 W/°C VGS Gate-to-Source Voltage ± 16 V TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) °C Absolute Maximum Ratings VDSS = 30V RDS(on) = 0.014? ID = 64A FETKYTM MOSFET & SCHOTTKY RECTIFIER Parameter Typ.
- gate charge
- current ??
- forward voltage
- drain current
- typical reverse
- schottky diode
PD 9.1608C IRL3103D1
TM FETKY MOSFET& SCHOTTKY RECTIFIER ® lPower MOSFETCopackaged HEXFET D andSchottky Diode0V VDSS= 3 lGeneration 5 Technology lLogic Level Gate Drive R =0.014W DS(on) lMinimize Circuit Inductance G lIdeal For Synchronous Regulator Application ID= 64A
Description The FETKY family of copackaged HEXFET power MOSFETs and Schottky Diodes offer the designer an innovative board space saving solution for switching regulator applications.A low on resistance Gen 5 MOSFET with a low forward voltage drop Schottky diode and minimized component interconnect inductance and resistance result in maximized converter efficiencies.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings Parameter V @10 ID@ TCContinuous Drain Current,= 25°CGSVS I @0V DTCContinuous Drain Current, V= 100°CGS@ 1S I PulsedDrain CurrentQS DM P @T =25°C PowerDissipation D A P @T =25°C PowerDissipation D C Linear Derating Factor V Gate-to-SourceVoltage GS T OperatingJunction and J T StorageTemperature Range STG Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Thermal Resistance Parameter RqJCJunction-to-Case RqJAJunction-to-Ambient
S
-
Max. 64 45 220 2.0 89 0.56 ± 16 -55 to+ 150
300 (1.6mm from case ) 10 lbfin (1.1Nm)
Typ. ––– –––
Max. 1.4 62
Units
A
W W W/°C V
°C
Units
°C/W
12/16/97
