IRL2505 HEXFET® Power MOSFET

G

PD - 91325C
IRL2505
HEXFET
®
Power MOSFET
D
V
DSS
= 55V
R
DS(on)
= 0.008

I
D
= 104A
U
S

Logic-Level Gate Drive
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier utilize
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designer with an extremely efficient and reliable device for
use in a wide variety of applications.
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approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
TO-220AB
acceptance throughout the industry.
Absolute Maximum Ratings
ParameterMax.
I
D
@ T
C
= 25°CContinuous Drain Current, V
GS
@ 10V104
U
I
D
@ T
C
= 100°CContinuous Drain Current, V
GS
@ 10V74
I
DM
Pulsed Drain Current
Q
360
P
D
@T
C
= 25°CPower Dissipation200
Linear Derating Factor1.3
V
GS
Gate-to-Source Voltage ± 16
E
AS
Single Pulse Avalanche Energy500
I
AR
Avalanche Current
Q
54
E
AR
Repetitive Avalanche Energy
Q
20
dv/dtPeak Diode Recovery dv/dt
S
5.0
T
J
Operating Junction and55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm)
Thermal Resistance
ParameterTyp.Max.
R

JC
Junction-to-Case0.75
R

CS
Case-to-Sink, Flat, Greased Surface0.50
R

JA
Juction-to-Ambient 62
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RstinUAWC°/WVJmAJmsn/VC°stinU/C°W111/19/01

IRL2505
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
ParameterMin.Typ.Max.Units

Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage55VV
GS
= 0V, I
D
= 250µA

V
(BR)DSS
/

T
J
Breakdown Voltage Temp. Coefficient 0.035V/°CReference to 25°C, I
D
= 1mA
0.008V
GS
= 10V, I
D
= 54A
T
R
DS(on)
Static Drain-to-Source On-Resistance 0.010

V
GS
= 5.0V, I
D
= 54A
T
0.013V
GS
= 4.0V, I
D
= 45A
T
V
GS(th)
Gate Threshold Voltage1.02.0VV
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance59SV
DS
= 25V, I
D
= 54A
25V
DS
= 55V, V
GS
= 0V
I
DSS
Drain-to-Source Leakage Current250µAV
DS
= 44V, V
GS
= 0V, T
J
= 150°C
I
GSS
Gate-to-Source Forward Leakage100nAV
GS
= 16V
Gate-to-Source Reverse Leakage-100V
GS
= -16V
Q
g
Total Gate Charge130I
D
= 54A
Q
gs
Gate-to-Source Charge25nCV
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge67V
GS
= 5.0V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time12V
DD
= 28V
t
r
Rise Time160I
D
= 54A
t
d(off)
Turn-Off Delay Time43nsR
G
= 1.3

V
GS
= 5.0V
t
f
Fall Time84R
D
= 0.50

See Fig. 10
T
L
S
Internal Source Inductance7.5nHaBnedt wceeennt elr eoafd ,die contact
C
iss
Input Capacitance5000V
GS
= 0V
C
oss
Output Capacitance1100pFV
DS
= 25V
C
rss
Reverse Transfer Capacitance390 = 1.0MHz, See Fig. 5

TSource-Drain Ratings and Characteristics
ParameterMin.Typ.Max.Units

Conditions
I
S
Continuous Source Current 104
U
MOSFET symbol
D
(Body Diode)Ashowing the
I
SM
Pulsed Source Current360integral reverse
G
(Body Diode)
Q
p-n junction diode.
S
V
SD
Diode Forward Voltage1.3VT
J
= 25°C, I
S
= 54A, V
GS
= 0V
T
t
rr
Reverse Recovery Time140210nsT
J
= 25°C, I
F
= 54A
Q
rr
Reverse Recovery Charge650970nCdi/dt = 100A/µs

T
t
on
Forward Turn-On TimeIntrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)

Notes:
Q
Repetitive rating; pulse width limited by
T
Pulse width

300µs; duty cycle

2%.
max. junction temperature. ( See fig. 11 )
U
Calculated continuous current based on maximum allowable

R
VR
DD
== 2255

V, ,I sta=r ti5n4gA .T
J
(

S= e2e5 F°iCg, uLr e= 1 22)40µH junction temperature;for recommended current-handling of the
SA GS
I
SD

54A, di/dt

230A/µs, V
DD

V
(BR)DSS
, package refer to Design Tip # 93-4
T
J

175°C

2

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0001 VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
001

01V5.2 20µs PULSE WIDTH
1
T
J
= 25°C
A
0.1110100
V
D

S
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics

0001T
J
= 25°C
100
T
J
= 175°C

01 2V0
D
µ
S
s= P 2U5LVSE WIDTH
12.53.54.55.56.57.5
A
V
G

S
, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
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0001 VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
001

IRL2505

10
2.5V
2T 0
J
µ=s 1P7U5°LCSE WIDTH
10.1110100
A
V
D

S
, Drain-to-Source Voltage (V)
Fig 2.
Typical Output Characteristics

2.5
I
D
=9

0A
.205.1

0.15.0V
GS

=5V
0.0-60-40-20020406080100120140160180
T
J
, Junction Temperature(
°
C)
Fig 4.
Normalized On-Resistance
Vs. Temperature
3

IRL2505

00001V = 0V, f = 1MHz
SGC =C +C ,C SHORTED
iss




gs




gd



ds
C = C
rss


gd
C =C + C
0008oss



ds


gd
Cssi0006

4000
C
oss

2000
C
r

ss
0110100
A
V
D

S
, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage

0100

100
T
J
= 175°C
T
J
= 25°C

4

10
V
G

S
= 0V
A
0.40.81.21.62.02.42.8
V
S

D
, Source-to-Drain Voltage (V)

Fig 7.
Typical Source-Drain Diode
Forward Voltage

51I = 54A
D V = 44V
SD V = 28V
SD219

6

3 F OSRE ET EFISGTU CRIER C13UIT
0A04080120160200
Q
G
, Total Gate Charge (nC)
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage

1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)

001

01

sµ01sµ001sm1sm01 T
C
= 25°C
T
J
= 175°C
1
Single Pulse
A
110100
V
D

S
, Drain-to-Source Voltage (V)

Fig 8.
Maximum Safe Operating Area
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LIMITED BY

PACKAGE

021001080604020255075100125150175
T
C
, Case Temperature( ° C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
1

D = 0.50

IRL2505

V
GS
D.U.T.
RG+VDD-V0.5DPuutlsy eF aWcitdotrh

µ

s
Fig 10a.
Switching Time Test Circuit
VSD%09%01VSGt
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms

02.00.10.10
0.05P
DM
0.02t
1

0.01(THESRINMGALLE RP

EUSLPSOENSE)t
2
Notes:
1. Duty factor D =t
1
/ t

2
0.012. Peak T
J
=P
DM
x Z
thJC
+ T
C
0.000010.00010.0010.010.1 1
t
1
, Rectangular Pulse Duration