IRF9540N HEXFET® Power MOSFET

llllllAdvanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°CContinuous Drain Current, V
GS
@ -10V
I
D
@ T
C
= 100°CContinuous Drain Current, V
GS
@ -10V
I
DM
Pulsed Drain Current
Q
P
D
@T
C
= 25°CPower Dissipation
Linear Derating Factor
V
GS
Gate-to-Source Voltage
E
AS
Single Pulse Avalanche Energy
I
AR
Avalanche Current
Q
E
AR
Repetitive Avalanche Energy
Q
dv/dtPeak Diode Recovery dv/dt
S
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
Parameter
R
q
JC
Junction-to-Case
R
q
CS
Case-to-Sink, Flat, Greased Surface
R
q
JA
Junction-to-Ambient

RG

PD - 91437B
IRF9540N
HEXFET
®
Power MOSFET
DV
DSS
= -100V
R
DS(on)
= 0.117
W
S
I
D
= -23A

TO-220AB

.xaM32-61-67-04119.002 ± 03411-410.5--55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
Typ.Max.
1.1
0.50
26

stinUAWC°/WVJmAJmsn/VC°stinUW/C°

5/13/98

IRF9540N
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
ParameterMin.Typ.Max.Units

Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage-100V
GS
V = 0V, I
D
= -250µA
D
V
(BR)DSS
/
D
T
J
Breakdown Voltage Temp. Coefficient-0.11V/°CReference to 25°C, I
D
= -1mA
R
DS(on)
Static Drain-to-Source On-Resistance0.117
W
V
GS
= -10V, I
D
= -11A
T
V
GS(th)
Gate Threshold Voltage-2.0-4.0V
D
V
S
= V
GS
, I
D
= -250µA
g
fs
Forward Transconductance5.3S
DS
V = -50V, I
D
= -11A
-25V
DS
= -100V, V
GS
= 0V
I
DSS
Drain-to-Source Leakage Current-250µA
DS
V = -80V, V
GS
= 0V, T
J
= 150°C
I
GSS
Gate-to-Source Forward Leakage100nA
GS
V = 20V
Gate-to-Source Reverse Leakage-100V
GS
= -20V
Q
g
Total Gate Charge97
D
I= -11A
Q
gs
Gate-to-Source Charge15nC
DS
V = -80V
Q
gd
Gate-to-Drain ("Miller") Charge51
GS
V = -10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time15
DD
V = -50V
t
r
Rise Time67
D
I= -11A
t
d(off)
Turn-Off Delay Time51ns
G
R= 5.1
W
t
f
Fall Time51
D
R= 4.2
W∃
See Fig. 10
T
D
Between lead,
L
D
Internal Drain Inductance4.56mm (0.25in.)
nHfrom package
G
L
S
Internal Source Inductance7.5and center of die contact
S
C
iss
Input Capacitance1300
GS
V = 0V
C
oss
Output Capacitance400pF
DS
V = -25V
C
rss
Reverse Transfer Capacitance240 = 1.0MHz, See Fig. 5

TSource-Drain Ratings and Characteristics
ParameterMin.Typ.Max.Units

Conditions
I
S
Continuous Source Current-23MOSFET symbol
D
(Body Diode)Ashowing the
I
SM
Pulsed Source Current-76integral reverse
G
(Body Diode)
Q
p-n junction diode.
S
V
SD
Diode Forward Voltage-1.6V
J
T= 25°C, I
S
= -11A, V
GS
= 0V
T
t
rr
Reverse Recovery Time150220ns
J
T = 25°C, I
F
= -11A
Q
rr
Reverse RecoveryCharge8301200nCdi/dt = -100A/µ

s
T
t
on
Forward Turn-On TimeIntrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)

Notes:
Q
Repetitive rating; pulse width limited by
S
I
SD
£
-11A, di/dt
£
-470A/µs, V
DD
£
V
(BR)DSS
,
max. junction temperature. ( See fig. 11 ) T
J
£
175°C
R
Starting T
J
= 25°C, L = 7.1mH
T
Pulse width
£
300µs; duty cycle
£
2%.
R
G
= 25
W
, I
AS
= -11A. (See Figure 12)

001 VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V

01

-4.5V 20µs PULSE WIDTH
1
T c
J
= 25°C
A
0.1110100
-V
D

S
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics

001T
J
= 25°C
10
T
J
= 175°C

1 V
D

S
= -25V
0.1
20µs PULSE WIDTH
45678910
A
-V
G

S
, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics

001 VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V

01

IRF9540N

V5.4- 20µs PULSE WIDTH
1
T
C
J
= 175°C
0.1110100
A
-V D S , Drain-to-Source Voltage (V)
Fig 2.
Typical Output Characteristics

5.2 I
D
= -19A
0.25.1

0.15.0 V
G

S
= -10V
0.0-60-40-20020406080100120140160180
A
T
J
, Junction Temperature (°C)
Fig 4.
Normalized On-Resistance
Vs. Temperature

IRF9540N

0003V = 0V, f = 1MHz
SGC =C +C ,C SHORTED
iss




gs




gd



ds
C = C
rss


gd
0052C =C + C
oss



ds


gd
0002 Cssi0051 Csso0001 Cssr0050A110100
-V , Drain-to-Source Voltage (V)
SDFig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage

001

01T
J
= 175°C
T
J
= 25°C
1

V
G

S
= 0V
0.10.20.40.60.81.01.21.41.6
A
-V
S

D
, Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage

20
I
D
= -11A
V
D

S
= -80V
V
D

S
= -50V
16
V
D

S
= -20V
2184 F OSRE ET EFISGT UCRIER C13UIT
0A020406080100
Q
G
, Total Gate Charge (nC)
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage

0001 OPERATION IN THIS AREA LIMITED
BY R
DS(on)

00101

sµ001sm1 T = 25°C
T
JC
= 175°C
10ms
1
Single Pulse
A
1101001000
-V
D

S
, Drain-to-Source Voltage (V)
Fig 8.
Maximum Safe Operating Area

5202510150255075100125150175
T
C
, Case Temperature( ° C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature

01

IRF9540N
RDVSDV
GS
D.U.T.
RGVDDV01-DPuutlsy eF aWcitdotrh
££ 01& 1
µ
%
s
Fig 10a.
Switching Time Test Circuit
t
d(on)
t
r
t
d(off)
t
f
VSG%01%09VSDFig 10b.
Switching Time Waveforms

1 D = 0.50
02.00.10P
DM
0.10.05t
1
20.0t0.01(THESIRNMGALLE RPEUSLPSOENSE)
2
Notes:
1. Duty factor D =t
1
/ t
2
2. Peak T
J
=P
DM
x Z
thJC
+ T
C
10.00.000010.00010.0010.010.1 1
t
1
, Rectangular Pulse Duration (sec)

Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRF9540N
LVSDRGD.U.TVDD
AISA-20V
t
0.01
W
DRIVER
pV51Fig 12a.
Unclamped Inductive Test Circuit
ISA

tpV
(BR)DSS
Fig 12b.
Unclamped Inductive Waveforms

QGV01-Q
GS
Q
GD
VGCharge
Fig 13a.
Basic Gate Charge Wav