BTA08 TW SW BTB08 TW SW
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Niveau: Secondaire, Lycée, Terminale
BTA08 TW/SW BTB08 TW/SW March 1995 LOGIC LEVEL TRIACS Symbol Parameter Value Unit IT(RMS) RMS on-state current (360° conduction angle) BTA Tc = 75 °C 8 A BTB Tc = 80 °C ITSM Non repetitive surge peak on-state current ( Tj initial = 25°C ) tp = 8.3 ms 85 A tp = 10 ms 80 I2t I2t value tp = 10 ms 32 A2s dI/dt Critical rate of rise of on-state current Gate supply : IG = 50mA diG/dt = 0.1A/µs Repetitive F = 50 Hz 20 A/µs Non Repetitive 100 Tstg Tj Storage and operating junction temperature range - 40 to + 150 - 40 to + 110 °C °C Tl Maximum lead temperature for soldering during 10 s at 4.5 mm from case 260 °C TO 220 AB (Plastic) A1 A2 G .LOW IGT = 5mA max . LOW IH = 15mA max .HIGH EFFICIENCY SWITCHING .BTA Family : INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION Symbol Parameter BTA / BTB08- Unit 400 TW/SW 600 TW/SW 700 TW/SW VDRM VRRM Repetitive peak off-state voltage Tj = 110 °C 400 600 700 V ABSOLUTE RATINGS (limiting values) FEATURES The BTA/BTB08 TW/SW use high performance products glass passivated chips.
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BTA08 TW/SW BTB08 TW/SW March 1995 LOGIC LEVEL TRIACS Symbol Parameter Value Unit IT(RMS) RMS on-state current (360° conduction angle) BTA Tc = 75 °C 8 A BTB Tc = 80 °C ITSM Non repetitive surge peak on-state current ( Tj initial = 25°C ) tp = 8.3 ms 85 A tp = 10 ms 80 I2t I2t value tp = 10 ms 32 A2s dI/dt Critical rate of rise of on-state current Gate supply : IG = 50mA diG/dt = 0.1A/µs Repetitive F = 50 Hz 20 A/µs Non Repetitive 100 Tstg Tj Storage and operating junction temperature range - 40 to + 150 - 40 to + 110 °C °C Tl Maximum lead temperature for soldering during 10 s at 4.5 mm from case 260 °C TO 220 AB (Plastic) A1 A2 G .LOW IGT = 5mA max . LOW IH = 15mA max .HIGH EFFICIENCY SWITCHING .BTA Family : INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION Symbol Parameter BTA / BTB08- Unit 400 TW/SW 600 TW/SW 700 TW/SW VDRM VRRM Repetitive peak off-state voltage Tj = 110 °C 400 600 700 V ABSOLUTE RATINGS (limiting values) FEATURES The BTA/BTB08 TW/SW use high performance products glass passivated chips.
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LOGIC LEVEL TRIACS
FEATURES LOW I= 5mA max GT LOW I= 15mA max H HIGH EFFICIENCY SWITCHING .INSULATING VOLTAGE = 2500V(RMS) BTA Family : (UL RECOGNIZED : E81734)
Tstg Tj Tl
BTA08 TW/SW BTB08 TW/SW
Unit A
1/5
°C °C °C
2 A s A/ms
Maximum lead temperature for soldering during 10 s at4.5 mm from case
- 40 to+ 150 - 40 to+ 110 260
BTA / BTB08-Unit 400 TW/SW600 TW/SW700 TW/SW 400 600 700V
March 1995
V Repetitivepeak off-state voltage DRM V Tj= 110°C RRM
Symbol
DESCRIPTION A1 A2 The BTA/BTB08TW/SW use high performance G products glass passivated chips. The low I/ Ilevel coupled with the high effi-GT H TO 220 AB ciency circuit make this family will adapted for low (Plastic) power trigger circuits (microcontrollers, microproc-essors, integrated circuits ...) ABSOLUTE RATINGS(limiting values) Symbol ParameterValue I RMSon-state currentBTA Tc= 75°C 8 T(RMS) (360°conduction angle) BTB Tc= 80°C I Nonrepetitive surge peak on-state currenttp = 8.3 ms85 TSM ( Tjinitial = 25°C ) tp = 10 ms80 2 2 I tI tvalue tp= 10 ms32 dI/dt Criticalrate of rise of on-state currentRepetitive 20 Gate supply : I= 50mAdi /dt= 0.1A/ms F= 50 Hz G G
Parameter
A
100
Storage and operating junction temperature range
Non Repetitive
