BD707 BD708

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Niveau: Secondaire, Lycée, Terminale
BD707/709/711 BD708/710/712 COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD707, BD709, and BD711 are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intented for use in power linear and switching applications. The complementary PNP types are BD708, BD710, and BD712 respectively. INTERNAL SCHEMATIC DIAGRAM October 1995 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BD707 BD709 BD711 PNP BD708 BD710 BD712 VCBO Collector-Base Voltage (IE = 0) 60 80 100 V VCES Collector-Emitter Voltage (VBE = 0) 60 80 100 V VCEO Collector-Emitter Voltage (IB = 0) 60 80 100 V VEBO Emit ter-Base Voltage (IC = 0) 5 V IC Collector Current 12 A IB Base Current 5 A Ptot Total Dissipation at Tc ≤ 25 oC 75 W Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC For PNP types voltage and current values are negative. 1 2 3 TO-220 1/4

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collector-emitter voltage

silicon epitaxial-base

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BD707/709/711 BD708/710/712

COMPLEMENTARY SILICON POWER TRANSISTORS

SGS-THOMSON PREFERRED SALESTYPES

DESCRIPTION The BD707, BD709, and BD711are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intented for use in power linearand switching applications. The complementary PNP types are BD708, BD710, andBD712 respectively.

ABSOLUTE MAXIMUM RATINGS Symb olP arameter

VCBOVolta geCollect or-B ase(IE= 0) VCESVolt age( VCollect or-E mitterBE= 0) VCEOVolt ageCollect or-E mitter( IB= 0) VEB OE mit te r-Bas eV olt age( IC= 0) ICCur rentCollect or IBCur rentB ase o Pto tat TT otalDiss ipationc3 25C Ts tgS torageT emperatu re TjOperati ngJunction TemperatureM ax. For PNP types voltage and currentvalues arenegative. October 1995

TO-220

3 2 1

INTERNAL SCHEMATIC DIAGRAM

V alu e NPN BD707BD709 P NPBD708 BD710 60 80 60 80 60 80 5 12 5 75 -65 to 150 150

Unit BD711 BD712 100 V 100 V 100 V V A A W o C o C

1/4

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